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Updated: Jan 26, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

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Photo-Atomic Layer Etching of GaAs/AlGaAs Nanoheterostructures

Mohammad R Aziziyan1, Hemant Sharma1, Jan J Dubowski1

  • 1Laboratory for Quantum Semiconductors and Photon-based BioNanotechnology, Interdisciplinary Institute for Technological Innovation (3IT), CNRS UMI-3463, Department of Electrical and Computer Engineering, Université de Sherbrooke , 3000, boul. de l'Université , Sherbrooke , Québec J1K 0A5 , Canada.

ACS Applied Materials & Interfaces
|April 24, 2019
PubMed

Keywords:
GaAs/AlGaAs nanoheterostructuresatomic layer etchingcompound semiconductorsdigital photocorrosionphotoluminescence

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