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Group 1 elements are soft and shiny metallic solids. They are malleable, ductile, and good conductors of heat and electricity. The melting points of the alkali metals are unusually low for metals and decrease going down the group, while the density increases going down the group with the exception of potassium (Table 1).
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Related Experiment Video

Updated: Jan 25, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

Selectively Metallized 2D Materials for Simple Logic Devices.

Ajjiporn Dathbun, Youngchan Kim, Yongsuk Choi

¹Department of Chemical and Biomolecular Engineering , Sogang University , Seoul 04107 , Korea.

ACS Applied Materials & Interfaces

|April 25, 2019

Summary

Researchers developed novel transparent, flexible, large-area molybdenum disulfide (MoS₂) transistors and logic gates using only MoS₂ and ion gel. This breakthrough enables low-cost, high-performance two-dimensional electronics.

Keywords:

MoS doping flexible monolithic transistor

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Last Updated: Jan 25, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

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Published on: November 28, 2017

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Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices

Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices

Published on: October 6, 2020

Area of Science:

Materials Science
Nanotechnology
Electronics Engineering

Background:

Traditional transistors require multiple materials, limiting flexibility and scalability.
Achieving high performance in flexible electronics remains a significant challenge.
Two-dimensional materials offer unique electronic properties but require innovative device architectures.

Purpose of the Study:

To demonstrate the first transparent, flexible, and large-area monolithic molybdenum disulfide (MoS₂) transistors and logic gates.
To present a novel device architecture utilizing selective doping of MoS₂ and an electrolyte gate.
To showcase the application of this architecture in driving light-emitting diode (LED) pixels.

Main Methods:

Chemical vapor deposition (CVD) growth of monolithic MoS₂ layers.
Selective doping of MoS₂ to create integrated electrodes and channel.
Integration with an ion gel electrolyte as the gate dielectric.
Fabrication and testing of individual transistors, logic gates, and LED pixel drivers.

Main Results:

Demonstrated monolithic MoS₂ transistors with mobility up to 1.5 cm²/V s and an on-off ratio of 10⁵.
Achieved effective gating (<3 V) with coplanar electrodes using an electrolyte gate dielectric.
Successfully fabricated NOT, NAND, and NOR logic gates and drove RGB LED pixels at low voltage (<3 V).
Exhibited excellent mechanical, operational, and environmental stability.

Conclusions:

The monolithic MoS₂ transistor architecture offers a facile route to low-cost, flexible, and high-performance two-dimensional electronics.
This approach simplifies device fabrication by eliminating the need for additional electrode materials.
The demonstrated capabilities pave the way for advanced flexible display and electronic applications.