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Electronic properties of several two dimensional halides from ab initio calculations
Mohamed Barhoumi1, Ali Abboud2, Lamjed Debbichi3
1Laboratoire de la Matière Condensée et des Nanosciences (LMCN), Université de Monastir, Département de Physique, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5019 Monastir, Tunisia.
This study explores halide monolayers, revealing electronic bandgaps from 3.0 to 7.5 eV and dynamic stability. Some materials transition from semiconductor to metal under an electric field.
Area of Science:
- Condensed Matter Physics
- Materials Science
Background:
- Two-dimensional (2D) materials, including halide monolayers, are of significant interest due to their unique electronic and optical properties.
- Understanding the fundamental electronic characteristics and stability of these materials is crucial for potential applications.
Purpose of the Study:
- To investigate the electronic properties and phonon spectra of various halide monolayers.
- To determine the impact of external electric fields on the electronic behavior of these 2D materials.
Main Methods:
- Employing density functional theory (DFT) calculations.
- Utilizing the HSE hybrid functional for accurate electronic bandgap determination.
- Analyzing phonon spectra to assess dynamic stability.
Main Results:
- Electronic bandgaps were calculated to be within the range of 3.0 to 7.5 eV.
- Phonon spectra confirmed the dynamic stability of the studied halide monolayers.
- A semiconductor-to-metal transition was observed in some systems when subjected to an external electric field.
Conclusions:
- Halide monolayers possess tunable electronic properties and inherent stability.
- The electric-field-induced semiconductor-to-metal transition offers potential for novel electronic device functionalities.
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