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Updated: Jan 25, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Effect of Interface Traps on the Device Performance of InGaAs-Based Gate-All-Around Tunneling Field-Effect

Won Douk Jang1, Young Jun Yoon1, Min Su Cho1

  • 1School of Electronics Engineering Kyungpook National University, Daegu 41566, Republic of Korea.

Journal of Nanoscience and Nanotechnology
|April 28, 2019
PubMed

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