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Published on: April 12, 2018
Enhancement of the Electrical Characteristics for 3D NAND Flash Memory Devices Due to a Modified Cell Structure in
Yeon Gyu Lee1, Hyun Soo Jung2, Tae Whan Kim1
1Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Korea.
Abstract:
The effect of a modified cell structure in the gate region on the electrical characteristics of three-dimensional (3D) NAND flash memory devices was investigated by using a technology computeraided design simulation. The interference in the memory devices induced by the pass voltage (Vpass) interference of 3D NAND flash was significantly affected depending on the cell size. The Vpass memory device with a modified cell structure was reduced due to an increase in the electron density of the inversion layer in comparison with conventional 3D flash memory devices, and their program operation was enhanced by the increased electric field. Furthermore, the program/erase margin of the proposed 3D NAND flash memory device was 15% larger than that of the conventional 3D NAND flash memory device.
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