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Updated: Jan 25, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
Indium Zinc Oxide Thin-Film Transistors with Ultraviolet Post-Annealing Treatment
Zi-Tong Ao1, Fei Shan1, Hong-Bo Guo1
1College of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, Korea.
Abstract:
Ultraviolet treatment (UV) light was performed for indium zinc oxide thin-film transistors (TFTs) for different time so as to study the effects of post-annealing on electrical characteristic of TFTs. Electrical characteristic results proved that the value of high mobility after UV post-annealing process (2 mW/cm². for 30 s was obviously enhanced, and it had an acceptable on/off ratio, reasonable threshold voltage, and subthreshold swing. Among them, the value of the electronic mobility is 2.41 cm²/Vs, the threshold voltage value is 8.31 V, the on/off current ratio value is 2×2 × 105, and the subthreshold swing value is 1.13 V/dec.
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