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Updated: Jan 25, 2026

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
Published on: April 18, 2019
Analysis of Minority Carrier Lifetime Dependence on Dual Gate Feedback Field Effect Transistor
Kyungchul Park1, Min-Woo Kwon1, Myung-Hyun Baek1
1Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-742, Republic of Korea.
Abstract:
In this paper, we investigated the dependence of minority carrier lifetime on dual gate FBFET. Generally, depending on the channel condition or trap density, the lifetime of minority carrier can be degraded. Since the potential barrier lowering through the accumulated carriers is essential for positive feedback, the deterioration of lifetime can make a critical influence on the operation of device. Therefore, we verified the tendency of threshold voltage according to carrier lifetime and channel length. Through the comparison with p-n diode and FBFET, we drew the relation between lifetime and threshold voltage. As a result, it has been confirmed that the device with significantly deteriorated lifetime or the device with extremely long channel does not effectively generate feedback and loses its steep switching characteristics.
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