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Updated: Jan 25, 2026

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Giuseppe Luongo1,2, Alessandro Grillo3, Filippo Giubileo4
1Physics Department "E. R. Caianiello", University of Salerno, via Giovanni Paolo II n. 132, 84084 Fisciano, Italy. giluongo@unisa.it.
Researchers developed a graphene/silicon junction device with excellent light-sensing capabilities. This novel photodetector exhibits tunable electrical properties, making it suitable for advanced optoelectronic applications.
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