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On Chip Optical Modulator using Epsilon-Near-Zero Hybrid Plasmonic Platform.

Mohamed A Swillam1, Aya O Zaki2,3, Khaled Kirah3

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We developed a compact silicon photonic modulator using indium-tin-oxide (ITO) and the epsilon-near-zero (ENZ) effect for efficient optical switching. This design offers low loss and high performance on silicon-on-insulator platforms.

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Area of Science:

  • Photonics
  • Materials Science
  • Electrical Engineering

Background:

  • Silicon photonics is crucial for optical communication.
  • Modulators are key components in photonic integrated circuits.
  • Existing modulators face challenges in size, loss, and energy efficiency.

Purpose of the Study:

  • To propose a novel micro-scale modulator architecture.
  • To leverage the epsilon-near-zero (ENZ) effect for enhanced modulator performance.
  • To ensure compatibility with the silicon-on-insulator (SOI) platform.

Main Methods:

  • Utilizing the ENZ effect of indium-tin-oxide (ITO).
  • Designing a hybrid plasmonic ring resonator.
  • Electrically inducing carriers in ITO to tune optical properties.
  • Optimizing structure for coupling with SOI waveguides.

Main Results:

  • Achieved compact size, low insertion loss, and high extinction ratio.
  • Demonstrated low energy per bit.
  • Showcased significant changes in effective index and resonator losses.
  • Confirmed reconfigurable operation via bias voltage.

Conclusions:

  • The proposed ITO-based ENZ modulator offers a promising solution for high-performance silicon photonics.
  • The hybrid plasmonic ring resonator design enhances modulator efficiency.
  • Compatibility with SOI platforms enables integration into existing photonic circuits.