Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Zener Diodes01:16

Zener Diodes

1.1K
Zener diodes are specialized semiconductor devices designed to operate in the reverse breakdown region, where they allow current to flow into the cathode, making it positive relative to the anode. This reverse operation distinguishes Zener diodes from conventional diodes and enables their use in various applications, most notably as voltage regulators. One of the defining characteristics of Zener diodes is their nearly vertical I-V (current-voltage) characteristic curve above a certain...
1.1K
The Ideal Diode01:15

The Ideal Diode

2.2K
A diode is a semiconductor device that allows current to flow in one direction only, making it a crucial component in electronic circuits for controlling the direction of current flow. An ideal diode is a simplified version of a real diode used to understand how diodes work in circuits. It possesses two terminals: the positive anode and the cathode, which is negative. When a positive voltage is applied to the anode relative to the cathode, the diode is in a forward-biased state, allowing...
2.2K
Diode: Forward bias01:20

Diode: Forward bias

2.1K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
2.1K
Modeling of Diode Forward Characteristics01:19

Modeling of Diode Forward Characteristics

1.1K
Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...
1.1K
Diode: Reverse bias01:14

Diode: Reverse bias

1.9K
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
1.9K
Small-signal Diode Model01:18

Small-signal Diode Model

1.5K
In analyzing the behavior of diodes in circuits, the relationship between the current through a diode and the voltage across it is of particular interest, especially when considering the effect of a direct current (DC) bias voltage. When applied, this DC bias influences the diode's operating point, known as the Q point, around which the current-voltage (I-V) characteristic of the diode exhibits exponential behavior. Introducing a small, time-varying signal on top of this bias aids in examining...
1.5K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Comprehensive Candidate Gene for Ginsenoside Rg1 Biosynthesis: Identification, Systematic Analysis, and Verification.

Plants (Basel, Switzerland)·2026
Same author

Integrated Metabolomics and Selection Signal Analysis Provide Insights Into the Selection for Flavonol Biosynthesis Associated With Lettuce Quality Improvement.

Plant biotechnology journal·2026
Same author

RNF2 mediates H2A ubiquitination to promote colitis via suppressing monocyte-macrophage transition in mice.

Nature communications·2026
Same author

An interpretable memory forensics framework for unknown attack identification in power grid edge devices.

Scientific reports·2026
Same author

Oil-Water Flow Monitoring in Wellbores with Inflow Control Valves Using Distributed Acoustic Sensing.

Sensors (Basel, Switzerland)·2026
Same author

Ultrasound Domain Adaptation for Robust Kidney Segmentation via Spectral-Similarity-Guided Translation.

Journal of imaging informatics in medicine·2026

Related Experiment Video

Updated: Jan 25, 2026

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference
07:56

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference

Published on: September 5, 2019

8.9K

Improving characterization capabilities in new single-photon avalanche diode research.

Xun Ding1, Kai Zang2, Tianzhe Zheng1

  • 1Hefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China.

The Review of Scientific Instruments
|May 3, 2019
PubMed
Summary

This study introduces a novel software-based method using a digital storage oscilloscope to effectively isolate weak avalanche signals from high gating responses in single-photon avalanche diodes (SPADs). This technique simplifies SPAD characterization and improves timing resolution.

More Related Videos

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
09:10

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

28.5K
Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
07:44

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes

Published on: November 16, 2018

9.4K

Related Experiment Videos

Last Updated: Jan 25, 2026

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference
07:56

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference

Published on: September 5, 2019

8.9K
Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
09:10

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

28.5K
Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
07:44

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes

Published on: November 16, 2018

9.4K

Area of Science:

  • Photonics and Optoelectronics
  • Semiconductor Device Physics
  • Instrumentation and Measurement

Background:

  • Novel single-photon avalanche diodes (SPADs) often exhibit high dark count rates, complicating device characterization.
  • Fast-gating techniques used to suppress dark counts introduce large gating responses that obscure avalanche signals.
  • Existing circuit-based cancellation methods for gating responses are complex and require precise tuning for each SPAD.

Purpose of the Study:

  • To present an alternative, software-based method for extracting weak avalanche signals from large gating responses in SPADs.
  • To simplify the characterization process for new SPAD devices, particularly those with high dark count rates.
  • To demonstrate a method that eliminates the need for complex circuitry and precise per-device tuning.

Main Methods:

  • Utilizing a high-speed digital storage oscilloscope (DSO) for signal acquisition.
  • Employing waveform subtraction in software to isolate avalanche signals from the gating response background.
  • Reducing the avalanche detection threshold to 5% of the DSO's full vertical scale or 5 mV.

Main Results:

  • Successfully extracted weak avalanche signals from significant gating response interference.
  • Achieved a reduced avalanche detection threshold, enabling detection of fainter signals.
  • Demonstrated timing resolution better than 2 ps for typical avalanche signals.
  • Facilitated easy optical alignment and calibration, with potential for on-wafer testing.

Conclusions:

  • The software-based waveform subtraction method offers a simplified and effective approach to SPAD characterization.
  • This technique is highly beneficial for research on new SPADs, especially those with high dark count rates or during development phases.
  • The method enhances measurement precision and ease of use compared to traditional circuit-based cancellation techniques.