Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Review and Preview01:10

Review and Preview

8.3K
In statistics, several tools are used to interpret the data. Measures of central tendency represent the characteristics of the data, such as mean, median, and mode. Additionally, measures of variance like standard deviation and range are used to find the spread of data from the mean. Relative standing measures the distance between data locations. Commonly used measures of relative standings are percentile, z score, and quartiles.
Percentiles are a type of fractile that partition data into...
8.3K
Review and Preview01:13

Review and Preview

10.9K
Data are individual items of information obtained from a population or sample. Data may be classified as qualitative (categorical), quantitative continuous, or quantitative discrete. Because it is not practical to measure the entire population in a study, researchers use samples to represent the population. A random sample is a representative group from the population chosen by using a method that gives each individual in the population an equal chance of being included in the sample. Random...
10.9K
Switching of BJT01:22

Switching of BJT

822
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
822
System of Memory01:23

System of Memory

7.3K
Memory is categorized into three major systems: sensory memory, short-term memory (STM), and long-term memory (LTM). These systems differ in their capacity and the duration for which they can hold information. Sensory memory captures raw sensory input from the environment, holding it for just a few seconds or less. For example, on hearing a brief, loud sound, like a car horn honking, the sound seems to linger in the mind for a moment even after it stops. This is an instance of sensory memory...
7.3K
Working Memory01:24

Working Memory

845
Working memory refers to a combination of components, including short-term memory and attention, that allow an individual to hold information temporarily as we perform cognitive tasks. It is an essential cognitive function that enables the execution of complex tasks such as problem-solving, comprehension, and reasoning. Unlike short-term memory, which simply involves the storage of information for a brief period, working memory involves the active manipulation and processing of this...
845
Resistivity01:22

Resistivity

4.4K
When a voltage is applied to a conductor, an electrical field is generated, and charges in the conductor feel the force due to the electrical field. The current density that results depends on the electrical field and the properties of the material. In some materials, including metals at a given temperature, the current density is approximately proportional to the electrical field. In these cases, the current density can be modeled as:
4.4K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Gigahertz Cutoff Frequencies and High Gain in Graphene-Based Hot-Electron Transistor Enabled by Material Engineering.

ACS applied materials & interfaces·2026
Same author

Technology Roadmap of Bioinspired Computing Hardware.

ACS nano·2026
Same author

Junctionless Silicon Nanowire Transistors without the Use of Impurity Doping.

ACS nano·2026
Same author

Controlling the Wake-Up Mechanism and Switching Kinetics of Ferroelectric Hf<sub><i>x</i></sub>Zr<sub>1 - <i>x</i></sub>O<sub>2</sub> through Hf Content Modulation.

ACS applied materials & interfaces·2025
Same author

Peak Splitting and Bias Fields in Ferroelectric Hafnia Mediated by Interface Charge Effects.

ACS applied materials & interfaces·2025
Same author

Effect of HZO Thickness Scaling in the Bilayer Ferroelectric Tunnel Junction.

ACS applied electronic materials·2025

Related Experiment Video

Updated: Jan 25, 2026

Thermal Measurement Techniques in Analytical Microfluidic Devices
08:29

Thermal Measurement Techniques in Analytical Microfluidic Devices

Published on: June 3, 2015

10.1K

Nanoscale resistive switching memory devices: a review.

Stefan Slesazeck1, Thomas Mikolajick1,2

  • 1NaMLab gGmbH, Noethnitzer Strasse 64 a, D-01187 Dresden, Germany.

Nanotechnology
|May 10, 2019
PubMed
Summary

This review classifies nanoscale resistive switching memory devices by their electrical behavior and switching mechanisms. It assesses their integration into CMOS circuits and suitability for advanced applications like neuromorphic computing.

More Related Videos

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens
07:15

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Published on: June 2, 2017

9.7K
Rapid Mix Preparation of Bioinspired Nanoscale Hydroxyapatite for Biomedical Applications
05:41

Rapid Mix Preparation of Bioinspired Nanoscale Hydroxyapatite for Biomedical Applications

Published on: February 23, 2017

19.9K

Related Experiment Videos

Last Updated: Jan 25, 2026

Thermal Measurement Techniques in Analytical Microfluidic Devices
08:29

Thermal Measurement Techniques in Analytical Microfluidic Devices

Published on: June 3, 2015

10.1K
A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens
07:15

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Published on: June 2, 2017

9.7K
Rapid Mix Preparation of Bioinspired Nanoscale Hydroxyapatite for Biomedical Applications
05:41

Rapid Mix Preparation of Bioinspired Nanoscale Hydroxyapatite for Biomedical Applications

Published on: February 23, 2017

19.9K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Engineering

Background:

  • Resistive switching memory devices offer potential for high-density data storage.
  • Understanding their diverse physical mechanisms is crucial for device optimization.

Purpose of the Study:

  • To review and classify nanoscale resistive switching memory devices.
  • To evaluate their electrical performance and CMOS integration.
  • To assess their potential for emerging applications beyond memory.

Main Methods:

  • Classification based on current-voltage (I-V) behavior and physical switching mechanisms.
  • In-depth analysis of electrical performance characteristics of representative devices.
  • Assessment of integration feasibility with CMOS technology and selector devices.

Main Results:

  • A classification scheme for resistive switching devices based on their electrical characteristics.
  • Detailed insights into the current performance benchmarks of various nanoscale memory concepts.
  • Evaluation of integration challenges and opportunities within modern semiconductor fabrication.

Conclusions:

  • A derived ranking methodology highlights the most promising resistive switching memory concepts for different applications.
  • Nanoscale resistive switching devices show potential for neuromorphic and in-memory computing, addressing the von Neumann bottleneck.