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Updated: Jan 25, 2026

Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate
Published on: September 28, 2019
Liquid-Film Assisted Mechanism of Reactive Flash Sintering in Oxide Systems
Rachman Chaim1, Yaron Amouyal2
1Department of Materials Science and Engineering, Technion⁻Israel Institute of Technology, Haifa 32000, Israel. rchaim@technion.ac.il.
Abstract:
Reactive flash sintering in oxide systems is analyzed assuming the formation of a liquid film at the particle contacts at the flash onset temperature. Formation of intermediate phases, as well as phase assemblage, are predicted upon optimal conditions of the electric field and current density. In single-phase impure oxides, the solidus and the solubility limit determine the flash onset temperature. In reacting binary systems, the composition of the liquidus determines primarily the reaction products during the cooling. In multicomponent systems, the oxide with the lowest flash temperature forms the interfacial liquid film, and the solid phase assemblage follows the equilibrium phase diagram. Examples from literature are consistent with reactive flash sintering and flash sintering assisted by a transient liquid film.
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