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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Gateless and reversible carrier density tunability in epitaxial graphene devices functionalized with chromium

Albert F Rigosi1, Mattias Kruskopf1,2, Heather M Hill1

  • 1National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.

Carbon
|May 18, 2019
PubMed

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