Long-term drift of Si-MOS quantum dots with intentional donor implants

Area of Science:

• Quantum Computing
• Semiconductor Physics
• Materials Science

Background:

• Charge noise poses a significant threat to the stability and performance of quantum dot (QD) based semiconductor qubits.
• Understanding and mitigating low-frequency charge noise is crucial for advancing quantum computing technologies.

Purpose of the Study:

• To investigate the impact of intentionally implanted donors on low-frequency charge noise in silicon metal-oxide-semiconductor (Si-MOS) devices.
• To assess the suitability of implanted qubits for scalable quantum computing architectures.

Main Methods:

• Charge offset drift measurements were performed on Si-MOS devices with strategically placed implanted donors near quantum dots.
• Analysis focused on identifying non-equilibrium drift characteristics (transients, discrete jumps) and equilibrium charge noise behavior.

Main Results:

• The Si-MOS system demonstrated non-equilibrium charge drift independent of donor implant properties.
• Equilibrium charge noise exhibited a 1/f dependence with a noise strength comparable to established GaAs and Si/SiGe systems.
• Devices with fewer than 50 implanted donors near the qubit showed no detrimental effects on long-term drift or 1/f noise.

Conclusions:

• Implanted qubits in Si-MOS systems can be fabricated without compromising long-term charge stability or introducing significant 1/f noise.
• The findings suggest that implanted qubits are a viable option for scalable quantum computing.