Chemical vapor deposition-free solution-processed synthesis method for two-dimensional MoS₂ atomic layer films

In this study, a solution-processed synthesis method was developed and successfully synthesized large-scale and uniform MoS₂ thin films without using chemical vapor deposition. The MoS₂ precursor solution was formulated by a sulfur-dissolving method to obtain uniform coating properties. MoS₂ thin film was prepared by simple spin-coating and a one-step annealing method. The solution-synthesized MoS₂ thin films were characterized to examine the 2H MoS₂ structure. The various atomic layers could be controlled with the precursor concentrations. For example, two layers were obtained with 0.0070 M, three layers were obtained with 0.0125 M, and five layers were obtained with 0.025 M of MoS₂ in the precursor solution, which were confirmed by scanning transmission electron microscopy.