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Updated: Jan 24, 2026

Facile Synthesis of Colloidal Lead Halide Perovskite Nanoplatelets via Ligand-Assisted Reprecipitation
Published on: October 1, 2019
Lead-free double perovskites Cs2InCuCl6 and (CH3NH3)2InCuCl6: electronic, optical, and electrical properties
Hung Q Pham1, Russell J Holmes2, Eray S Aydil3
1Department of Chemistry, Chemical Theory Center, and Supercomputing Institute, University of Minnesota, 207 Pleasant Street SE, Minneapolis, Minnesota 55455, USA. gagliard@umn.edu.
Researchers explored indium-based double perovskites as lead-free solar cell alternatives. Cs2InCuCl6 and MA2InCuCl6 show promise due to high absorption coefficients and suitable band gaps for photovoltaic applications.
Area of Science:
- Materials Science
- Solid-State Physics
- Computational Chemistry
Background:
- Lead-containing metal halide perovskites are widely studied for solar cells but raise environmental concerns.
- Developing lead-free alternatives with comparable or superior optoelectronic properties is crucial for sustainable energy technologies.
Purpose of the Study:
- To investigate indium-based inorganic (Cs2InMX6) and organic-inorganic hybrid (MA2InCuCl6) double perovskites as potential lead-free solar cell materials.
- To evaluate their electronic and optical properties using computational methods.
Main Methods:
- Density functional theory (DFT) calculations using Kohn-Sham formalism.
- Exploration of various indium-based double perovskite compositions (M = Cu, Ag, Au; X = Cl, Br, I).
- Band gap, absorption coefficient, and charge carrier mobility calculations.
Main Results:
- Cs2InCuCl6 and MA2InCuCl6 identified as promising candidates.
- Cs2InCuCl6 exhibits a direct band gap (1.05–1.73 eV) and high absorption coefficient, exceeding c-Si and CdTe.
- MA2InCuCl6 has an indirect band gap (1.31–2.09 eV) with a higher absorption coefficient than c-Si and CdTe.
- Intrinsic charge carrier mobilities of Cs2InCuCl6 are comparable to MAPbI3.
Conclusions:
- Cs2InCuCl6 and MA2InCuCl6 are promising lead-free semiconductors for photovoltaic and optoelectronic applications.
- Calculated band edge positions provide guidance for heterojunction design.
- Further experimental validation is warranted to confirm their potential.
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