Graphene bridge rectifier based on self-switching diode arrays.

Area of Science:

• Solid-state physics
• Materials science
• Electrical engineering

Background:

• Graphene's unique properties, such as high carrier mobility, enable high-frequency electronic devices.
• Traditional rectifiers face limitations at terahertz (THz) frequencies.
• Graphene self-switching diodes (GSSDs) offer potential for THz rectification.

Purpose of the Study:

• To present the theory and experimental validation of a bridge rectifier constructed from graphene self-switching diodes (GSSDs).
• To investigate the performance of GSSD bridge rectifiers for full-wave AC signal rectification in the THz range.
• To characterize the responsivity and noise equivalent power of the fabricated GSSD bridge rectifier.

Main Methods:

• Theoretical derivation of the voltage output equation for a GSSD bridge rectifier.
• Fabrication of GSSD arrays to form a bridge rectifier structure.
• AC and DC electrical measurements to confirm theoretical predictions and assess performance.

Main Results:

• The GSSD bridge rectifier enables full-wave rectification of AC signals.
• A quadratic relationship between output voltage and input current was theoretically derived and experimentally confirmed.
• The fabricated rectifier exhibited high room temperature intrinsic responsivity and low noise equivalent power.

Conclusions:

• Graphene self-switching diodes are suitable for constructing efficient bridge rectifiers operating at THz frequencies.
• The GSSD bridge rectifier design overcomes limitations of single-diode structures for full-wave rectification.
• The demonstrated performance metrics indicate significant potential for GSSD-based rectifiers in high-frequency applications.