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Nanotechnology|June 1, 2019
Graphene bridge rectifier based on self-switching diode arraysJiawei Zhang, Joseph Brownless, Aimin SongACS Applied Materials & Interfaces|November 1, 2021
Photoluminescent Semiconducting Graphene Nanoribbons via Longitudinally Unzipping Single-Walled Carbon NanotubesHu Li, Jiawei Zhang, A Baset Gholizadeh, et al.Materials (Basel, Switzerland)|August 5, 2017
Transparent Thin-Film Transistors Based on Sputtered Electric Double LayerWensi Cai, Xiaochen Ma, Jiawei Zhang, et al.Nature Communications|July 4, 2015
Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHzJiawei Zhang, Yunpeng Li, Binglei Zhang, et al.ACS Applied Materials & Interfaces|November 11, 2024
Effects of Ion Valence States and Radii on the Performance of Solid-State PEDOT:PSS Electrochromic DevicesShufei Gu, Wenlong Liu, Xuemei Yin, et al.Materials (Basel, Switzerland)|August 5, 2017
High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film TransistorsJiawei Zhang, Jia Yang, Yunpeng Li, et al.Optics Express|October 14, 2022
Self-powered UV photodetectors and imaging arrays based on NiO/IGZO heterojunctions fabricated at room temperatureMingyang Wang, Jiawei Zhang, Qian Xin, et al.Proceedings of the National Academy of Sciences of the United States of America|February 27, 2019
Extremely high-gain source-gated transistorsJiawei Zhang, Joshua Wilson, Gregory Auton, et al.Scientific Reports|April 13, 2017
A Sputtered Silicon Oxide Electrolyte for High-Performance Thin-Film TransistorsXiaochen Ma, Jiawei Zhang, Wensi Cai, et al.Nano Letters|September 5, 2023
Toward High-Peak-to-Valley-Ratio Graphene Resonant Tunneling DiodesZihao Zhang, Baoqing Zhang, Yiming Wang, et al.Pageof 111