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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
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Modeling of Negative Capacitance in Ferroelectric Thin Films.
Hyeon Woo Park1, Jangho Roh1, Yong Bin Lee1
1Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 151-744, Republic of Korea.
Advanced Materials (Deerfield Beach, Fla.)
|June 6, 2019
Summary
Negative capacitance (NC) in ferroelectric thin films offers a solution for reducing power consumption in transistors and preventing charge loss in memory. This study reveals how domain wall motion in thin films enables stable NC operation.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Semiconductor Device Physics
Background:
- Negative capacitance (NC) effect in ferroelectric thin films is a promising solution for reducing power consumption in field-effect transistors and preventing charge loss in dynamic random-access memory.
- Understanding the NC effect is crucial for advancing next-generation electronic devices.
Purpose of the Study:
- To investigate the correlation between domain wall motion and the negative capacitance effect in ferroelectric and dielectric thin films.
- To explore the influence of film thickness on the emergence and stability of the NC effect.
- To analyze the physical mechanisms governing domain wall behavior under NC conditions.
Main Methods:
- Development of a phase-field model based on the time-dependent Ginzburg-Landau (TDGL) formalism.
- Incorporation of the Chensky-Tarasenko (C-T) formalism to describe multidomain configurations.
- Numerical simulations and analytical modeling to study ferroelectric and dielectric films of varying thicknesses.
Main Results:
- A stripe domain structure emerges in sufficiently thin ferroelectric films due to the balance between electrostatic and domain wall energies.
- This stripe domain structure exhibits resilience, facilitating quasi-static NC operation.
- Domain wall motion in the stripe domain structure remains externally driven, even in the quasi-static NC state.
Conclusions:
- The formation of a stable stripe domain structure is key to achieving the negative capacitance effect in thin ferroelectric films.
- The findings provide insights into the fundamental physics of NC and its potential for low-power electronics.
- Domain wall dynamics are critical for the practical application of NC in memory and transistor technologies.
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