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Negative Additive Manufacturing of Complex Shaped Boron Carbides
Published on: September 18, 2018
Predicting two-dimensional semiconducting boron carbides
Xinxin Tian1, Xiaoyu Xuan2, Meng Yu3
1Institute of Molecular Science, Key Laboratory of Materials for Energy Conversion and Storage of Shanxi Province, Shanxi University, Taiyuan 030006, P. R. China. ywmu@sxu.edu.cn lisidian@sxu.edu.cn.
Abstract:
Carbon and boron can mix to form numerous two-dimensional (2D) compounds with strong covalent bonds, yet very few possess a bandgap for functional applications. Motivated by the structural similarity between graphene and recently synthesized borophene, we propose a new family of semiconducting boron carbide monolayers composed of B4C3 pyramids and carbon hexagons, denoted as (B4C3)m(C6)n (m, n are integers) by means of the global minimum search method augmented with first-principles calculations. These monolayers are isoelectronic to graphene yet exhibit increased bandgaps with decreasing n/m, due to the enhanced localization of boron multicenter bonding states as a consequence of the electronic transfer from boron to carbon. In particular, the B4C3 monolayer is even more stable than the previously synthesized BC3 monolayer and has a direct bandgap of 2.73 eV, with the promise for applications in optical catalysis and optoelectronics. These results are likely to inform the on-going effort on the design of semiconducting 2D materials based on other light elements.
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