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Updated: Jan 23, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Tunable Control of Interlayer Excitons in WS2/MoS2 Heterostructures via Strong Coupling with Enhanced Mie Resonances
Jiahao Yan1, Churong Ma1, Yingcong Huang1
1State Key Laboratory of Optoelectronic Materials and Technologies Nanotechnology Research Center School of Materials Science & Engineering Sun Yat-sen University Guangdong Guangzhou 510275 P. R. China.
Abstract:
Strong Coulomb interactions in monolayer transition metal dichalcogenides (TMDs) produce strongly bound excitons, trions, and biexcitons. The existence of multiexcitonic states has drawn tremendous attention because of its promising applications in quantum information. Combining different monolayer TMDs into van der Waals (vdW) heterostructures opens up opportunities to engineer exciton devices and bring new phenomena. Spatially separated electrons and holes in different layers produce interlayer excitons. Although much progress has been made on excitons in single layers, how interlayer excitons contribute the photoluminescence emission and how to tailor the interlayer exciton emission have not been well understood. Here, room temperature strong coupling between interlayer excitons in the WS2/MoS2 vdW heterostructure and cavity-enhanced Mie resonances in individual silicon nanoparticles (Si NPs) are demonstrated. The heterostructures are inserted into a Si film-Si NP all-dielectric platform to realize effective energy exchanges and Rabi oscillations. Besides mode splitting in scattering, tunable interlayer excitonic emission is also observed. The results make it possible to design TMDs heterostructures with various excitonic states for future photonics devices.
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