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Related Experiment Video

Updated: Jul 14, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

Scalable Graphene/Sn-WSe2/Si Photodetector Array With Broadband Response and Starlight Sensitivity for All-Light

Weidan Yao1,2, Kailong Han3, Liang Yu1

  • 1School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, Guangdong, P. R. China.

Small (Weinheim an Der Bergstrasse, Germany)
|July 13, 2026
PubMed
Summary

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Synthesis of Uniform 6-Armchair Graphene Nanoribbons and Their Isotope and Nitrogen-Doped Derivatives.

Angewandte Chemie (International ed. in English)·2026
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High-Performance Linear Polarization-Sensitive WSe<sub>2</sub>/SnS<sub>0.25</sub>Se<sub>0.75</sub> Heterojunction Photodetectors: Synergy of Type-II Band Alignment and Gate-Modulated Anisotropic Transport.

ACS applied materials & interfaces·2026
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A Broad-Band Self-Powered Photodetector Based on a MoTe<sub>2</sub>/Bi<sub>2</sub>Te<sub>3</sub> Heterojunction for Optical Imaging and Bias-Controlled Signal Modulation.

Materials (Basel, Switzerland)·2026
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Failure Behavior and Mechanism of Solder Joint Under Thermal Mechanical Coupling Loads.

Materials (Basel, Switzerland)·2026
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Zinc indium sulfide (ZnIn<sub>2</sub>S<sub>4</sub>): a promising candidate material towards next-gen photodetection.

Materials horizons·2026
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Composition-modulated anti-ambipolar behavior enabled by two-dimensional GeS<sub><i>x</i></sub>Se<sub>1-<i>x</i></sub>/SnS<sub>2</sub> van der Waals heterostructures for high-performance logic inverters.

Nanoscale horizons·2025

Researchers developed a novel graphene/amorphous tin-doped tungsten diselenide/silicon photodetector array. This broadband, self-powered device achieves high sensitivity and fast response times, enabling advanced imaging applications.

Area of Science:

  • Materials Science
  • Optoelectronics
  • Nanotechnology

Background:

  • Photodetector development faces challenges in matching biological vision sensitivity and extending spectral response.
  • Existing technologies struggle to achieve high sensitivity across a broad spectrum.

Purpose of the Study:

  • To report a scalable photodetector array with enhanced sensitivity and broadband spectral response.
  • To demonstrate a self-powered photodetector exceeding retinal sensitivity.

Main Methods:

  • Fabrication of graphene/amorphous Sn-doped WSe2/Si heterostructures using pulsed-laser deposition.
  • Characterization of carrier lifetime, photoresponse spectrum, noise-equivalent power, and specific detectivity.
  • Demonstration of imaging capabilities including broadband visualization and starlight-level perception.
Keywords:
amorphous Sn‐doped WSe2broadband photodetectormultidimensional imagingstarlight‐level perception

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Related Experiment Videos

Last Updated: Jul 14, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

Visible-light Induced Reduction of Graphene Oxide Using Plasmonic Nanoparticle
07:24

Visible-light Induced Reduction of Graphene Oxide Using Plasmonic Nanoparticle

Published on: September 22, 2015

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response
09:03

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response

Published on: January 7, 2019

Main Results:

  • Achieved a self-powered photoresponse from 365 to 1550 nm with a low noise-equivalent power (0.029 fW/Hz^1/2) and high specific detectivity (3.4 × 10^14 Jones at 808 nm).
  • Demonstrated a high photo-switching ratio (>10^6) and fast response times (18.3/27.2 µs).
  • Showcased broadband visualization, see-through imaging, and starlight-level perception capabilities with excellent pixel uniformity.

Conclusions:

  • The developed Gr/Sn-WSe2/Si photodetector array offers superior performance exceeding retinal sensitivity and broad spectral coverage.
  • The device's attributes pave the way for practical deployment of next-generation imaging technologies.
  • Scalability and uniformity suggest potential for widespread applications in advanced imaging.