Memory Distance for Interfacial Chemical Bond-Induced Friction at the Nanoscale

Macroscale rate and state friction (RSF) laws include a memory distance, D_c, which is considered to be the distance required for a population of frictional contacts to renew itself via slip, counteracting the effects of aging in slow or static contact. This concept connects static friction and kinetic friction. Here, we use atomic force microscopy to study interfacial chemical bond-induced kinetic friction and the memory distance at the nanoscale for single silica-silica nanocontacts. We observe a logarithmic trend of decreasing friction with sliding velocity (i.e., velocity-weakening) at low velocities and a transition to increasing friction with velocity at higher velocities (i.e., velocity-strengthening). We propose a physically based kinetic model for the nanoscale memory effect, the "activation-passivation loop" model, which accounts for the activation and passivation of chemical reaction sites and the formation of new chemical bonds from dangling bonds during sliding. In the model, we define the memory distance to be the average sliding distance that accrues before an activated reaction site becomes passivated. Results from numerical simulations based on this model match experimental friction data well in the velocity-weakening regime and show that D_c is sensitive to the surface chemistry, and nearly independent of sliding velocity. The simulations also show values of D_c that are consistent with those obtained from the experiments. We propose a semiquantitative physical explanation of the observed logarithmic velocity-weakening behavior based on the conservation of the number of interfacial bonds during sliding. We also extract from the experimental data physically reasonable values of the energy barriers to the activation of reaction sites. Our results provide one possible physical mechanism for the nanoscale memory distance.