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Gate-tunable large spin polarization in a few-layer black phosphorus-based spintronic device
Liwen Zhang1, Jun Chen, Xiaohong Zheng
1State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan 030006, China. zhanglei@sxu.edu.cn.
Nanoscale
|June 12, 2019
Summary
This study demonstrates gate-tunable spin transport in trilayer black phosphorus (BP) on Ni(100). Gate voltage controls spin polarization and magnetoresistance, offering a new pathway for spintronic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Black phosphorus (BP) is a promising material for spintronic applications.
- Controlling spin transport properties is crucial for developing advanced electronic devices.
Purpose of the Study:
- To investigate the gate-tunable spin transport properties of trilayer BP on a Ni(100) electrode.
- To explore a novel mechanism for modulating spin polarization and conductance using the Stark effect.
Main Methods:
- First principles calculations were employed to study spin transport.
- The influence of gate voltage on spin-dependent conductance and polarization was analyzed.
- The role of the Stark effect in inducing phase transitions was examined.
Main Results:
- Gate voltage significantly modulates spin polarization (7%-77% in PC, 1%-54% in APC) and conductance.
- A giant Stark effect induces a semiconducting-metallic phase transition in BP, controlling spin transport.
- Maximum magnetoresistance (MR) reached 80%, with large on/off ratios for spin currents (4239 for spin down, 1809 for spin up).
Conclusions:
- The proposed device architecture offers effective control over spin-polarized currents via gate voltage.
- This work presents a feasible approach for novel spintronic nanodevices utilizing few-layer black phosphorus.
- The findings highlight the potential of BP in next-generation spintronics.
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