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Updated: Jan 23, 2026

Transcranial Direct Current Stimulation tDCS for Memory Enhancement
Published on: September 18, 2021
Forming-Free SiGeO/TiO Resistive Random Access Memories Featuring Large Current Distribution Windows
Chun-Hu Cheng1, Albert Chin2, Hsiao-Hsuan Hsu3
1Department of Mechatronic Engineering, National Taiwan Normal University, Taipei 10610, Taiwan.
Abstract:
Optimal device integrity was achieved in Ni/SiGeO/TiO/TaN resistive memory by using a forming-free switch with a low switching power of 790 μW, stable endurance of 104 cycles, optimal retention time of 105 s, resistance window of at least 1150×, and tight current distributions at 85 °C. These characteristics are attributed to the low current switching obtained using SiGeO with a high oxygen vacancy density and highly defective TiO grain boundaries.
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