Forming-Free SiGeO/TiO Resistive Random Access Memories Featuring Large Current Distribution Windows

Area of Science:

• Materials Science
• Electrical Engineering
• Solid-State Physics

Background:

• Resistive Random-Access Memory (RRAM) is a promising non-volatile memory technology.
• Achieving high device integrity with low operating power and stable performance remains a challenge.

Purpose of the Study:

• To develop and characterize a Ni/SiGeO/TiO/TaN based resistive memory device.
• To investigate the potential of SiGeO and TiO materials for forming-free switching and enhanced memory characteristics.

Main Methods:

• Fabrication of Ni/SiGeO/TiO/TaN stacks.
• Electrical characterization including switching behavior, endurance, retention, and resistance window analysis.
• Analysis of material properties influencing device performance, focusing on oxygen vacancy density and grain boundary defects.

Main Results:

• Achieved forming-free switching with low switching power (790 μW).
• Demonstrated stable endurance (10^4 cycles), optimal retention (10^5 s), and a large resistance window (>1150×).
• Observed tight current distributions at 85 °C, indicating robust device integrity.

Conclusions:

• The Ni/SiGeO/TiO/TaN device offers optimal integrity and forming-free switching.
• High oxygen vacancy density in SiGeO and defective TiO grain boundaries are key to the observed low current switching and excellent performance.