High sensitivity Si-based photodetection with nanoscale protective layer based on interface states
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Anhua Dong1,2, Zhenghan Pei3, Junjie Yuan3
1State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China.
Abstract:
A large lateral photovoltaic effect has been observed at the interface of SiO2/p-Si/SiO2 structure. Different from the traditional Schottky junction or PN junction device, this photovoltage is mainly dominated by the interface states existing at SiO2/p-Si interface, where the covered nanoscale SiO2 layer brings this device a stable and high photoelectric performance. These interface states can be explained as built-in field caused by the band bending at interface, which regulates the generation and diffusion of photo induced carriers. In this study, we discuss clearly the factors that impact greatly on the photovoltage output and sensitivity, including the oxide thickness, resistivity and tunneling effect. We believe this simple but efficient device will be beneficial for the exploring in photoelectric detection.
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