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Updated: Jul 18, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Photoinduced Nonvolatile Resistive Switching Behavior in Oxygen-Doped MoS2 for a Neuromorphic Vision System
Ke Chang1,2, Xinhui Zhao1,2, Xinna Yu3
1State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China.
Abstract:
Controlling resistance by external fields provides fascinating opportunities for the development of novel devices and circuits, such as temperature-field-induced superconductors, magnetic-field-triggered giant magnetoresistance devices, and electric-field-operated flash memories. In this work, we demonstrate a light-triggered nonvolatile resistive switching behavior in oxygen-doped MoS2. The two-terminal devices exhibit stable light-modulated resistive switching characteristics and optically tunable synaptic properties with an on/off ratio of up to 104. The integrated device with crossbar architecture enables simultaneous image sensing, preprocessing, and storage in a single device, thereby increasing the training efficiency and recognition rate of image recognition tasks. This work presents a novel pathway to develop the next generation of light-controlled memory and artificial vision systems for neuromorphic computing.
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