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Design principle of half-sandwich type erbium single-ion magnets through crystal field engineering: a combined
Yin-Shan Meng1, Mu-Wen Yang2, Ling Xu3
1State Key laboratory of Fine Chemicals, Dalian University of Technology, 2 Linggong Rd., Dalian, 116024, China. mengys@dlut.edu.cn and Beijing National Laboratory for Molecular Sciences, Beijing Key Laboratory for Magnetoelectric Materials and Devices, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China. wangbw@pku.edu.cn gaosong@pku.edu.cn.
Abstract:
To conclude the design principle for high-performance erbium-based single-ion magnets (SIMs), two half-sandwich type erbium complexes 1Er [(LOMe)Er(COT)] (LOMe = [(η5-C5H5)Co{P([double bond, length as m-dash]O)(OMe)2}3], COT = cyclooctatetraenyl) and 2Er [(THF)2(OAr)Er(COT)] (Ar = 2,6-Dipp2C6H3, Dipp = 2,6-diisopropylphenyl) were synthesized, and structurally and magnetically characterized. Both of them exhibited SIM behavior. Their magnetic relaxation behaviours were further elucidated by ab initio calculations and near-IR emission spectroscopy. The results demonstrated that an axial ligand with a weaker electron-donating effect was preferential to construct high blocking barrier erbium-based SIMs.
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