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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
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Corrigendum: Material characterisation of nanowires with Intrinsic stress (2017 Nanotechnology 28 355706)
1Department of Chemistry, Trinity College Dublin, Trinity College, Dublin, Dublin, IRELAND.
Abstract:
This is to provide a correction to the acknowledgement section of the previously published paper: Mills, S., Sader, J.E., Boland, J.J. "Material characterisation of nanowires with Intrinsic stress" Nanotechnology 28(35), Article No: 355706, 01 September 2017. DOI: 10.1088/1361-6528/aa7c31.
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