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Updated: Jan 22, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Spin preservation during THz orbital pumping of shallow donors in silicon
K Saeedi1, N Stavrias1, B Redlich1
1FELIX laboratory, Radboud University, Toernooiveld 7, 6525 ED Nijmegen, The Netherlands.
Abstract:
We investigate the spin relaxation under conditions of optical excitation between the Rydberg orbital states of phosphorus donor impurities in silicon. Here we show that the spin relaxation is less than a few percent, even after multiple excitation/relaxation cycles. The observed high level of spin preservation may be useful for readout cycling or in quantum information schemes where coupling of neighbor qubits is via orbital excitation.
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