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Improved MRD 4H-SiC MESFET with High Power Added Efficiency

Shunwei Zhu1, Hujun Jia2, Xingyu Wang1

  • 1School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|July 20, 2019
PubMed

Keywords:
4H-SiCIMRD structureMESFETpower added efficiency

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