Improved DRUS 4H-SiC MESFET with High Power Added Efficiency
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Updated: Dec 31, 2025

Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
Hujun Jia1, Yuan Liang1, Tao Li1
1School of Microelectronics, Xidian University, Xi'an 710071, China.
Abstract:
A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper. The structure (LDUS-MESFET) introduced layered doping under the lower gate of the channel, while optimizing the thickness of the undoped region. Compared with the double-recessed 4H-SiC MESFET with partly undoped space region (DRUS-MESFET), the power added efficiency of the LDUS-MESFET is increased by 85.8%, and the saturation current is increased by 27.4%. Although the breakdown voltage of the device has decreased, the decrease is within an acceptable range. Meanwhile, the LDUS-MESFET has a smaller gate-source capacitance and a large transconductance. Therefore, the LDUS-MESFET can better balance DC and AC characteristics and improve power added efficiency (PAE).
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