Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer.

Area of Science:

• Semiconductor Device Physics
• Materials Science
• Electrical Engineering

Background:

• High-electron-mobility transistors (HEMTs) are crucial for high-frequency and high-power applications.
• Improving energy efficiency in HEMTs is essential for advanced electronic systems.

Purpose of the Study:

• To propose and investigate a novel AlGaN/GaN HEMT structure with a high gate and multi-recessed buffer (HGMRB).
• To evaluate the performance and energy efficiency of the proposed HGMRB HEMT using TCAD and RF simulations.

Main Methods:

• Technology Computer Aided Design (TCAD) Sentaurus and Advanced Design System (ADS) simulations were employed.
• A novel HGMRB AlGaN/GaN HEMT structure was designed and simulated.
• Radio frequency (RF) simulations were conducted to assess power-added efficiency (PAE).

Main Results:

• The HGMRB HEMT exhibited a 16.7% increase in breakdown voltage and a 17% decrease in gate-to-source capacitance.
• Slight decreases in maximum drain saturation current and transconductance were observed.
• High power-added efficiency (PAE) of 90.8% at 600 MHz, 89.3% at 1.2 GHz, and 84.4% at 2.4 GHz was achieved.

Conclusions:

• The proposed HGMRB HEMT structure demonstrates superior performance characteristics compared to conventional HEMTs.
• The HGMRB HEMT is a promising candidate for high energy-efficiency applications.
• The enhanced breakdown voltage and high PAE ensure large output power density for the novel device.