Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Metallic Solids

Metallic Solids

Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Stent-Assisted Surgical Creation of a Ductal Drainage Tract in the Third Eyelid Gland for Treatment of Postoperative Lacrimal Cyst of the Nictitating Membrane in a Dog.

Veterinary ophthalmology·2026

Same author

Influence of Machining, Polishing, and Glazing on Surface Properties and Biological Performance of Zirconia and Lithium Disilicate Dental Ceramics.

Journal of functional biomaterials·2025

Same author

True First-Order Surface Phase Transition without Nanoscale Phase Separation.

ACS nano·2023

Same author

Intertwined Solitons and Impurities in a Quasi-One-Dimensional Charge-Density-Wave System: In/Si(111).

Physical review letters·2019

Same author

Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice.

Physical review letters·2018

Same author

Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping.

Nature communications·2017

Search research articles

Related Experiment Video

Updated: Jan 13, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

√7 × √3 surface with a double layer of In on Si(1 1 1) exhibiting both hexagonal and rectangular features.

Jeongseok Woo¹, Hyungjoon Shim¹, Geunseop Lee¹

¹Department of Physics, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea.

Journal of Physics. Condensed Matter : an Institute of Physics Journal

|July 20, 2019

Summary

The study reveals that the hexagonal and rectangular In-induced phases on Silicon(111) are the same double-layer structure. This finding challenges previous assumptions about distinct surface phases and In coverage.

More Related Videos

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

Published on: February 11, 2020

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

Related Experiment Videos

Last Updated: Jan 13, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

Published on: February 11, 2020

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

Area of Science:

Surface Science
Materials Science
Nanotechnology

Background:

The Si(111) surface is a well-studied substrate for thin film growth.
Indium (In) deposition on Si(111) can form various surface reconstructions.
Previously, √7×√7 and √7×√7 phases were thought to represent different In coverages.

Purpose of the Study:

To investigate the structural relationship between the In-induced √7×√7-hex and √7×√7-rect phases on Si(111).
To determine the actual In coverage and structure responsible for these observed surface phases.
To clarify the prevailing understanding of In/Si(111) surface reconstructions.

Main Methods:

Scanning Tunneling Microscopy (STM) was employed to image the surface structures.
Bias-dependent STM imaging was used to analyze the electronic properties of the domains.
In-situ observations of island formation on different phases provided thickness information.

Main Results:

Both √7×√7-hex and √7×√7-rect features were observed within the same domain using bias-dependent STM.
The formation of a √7×√7-hex island on a √7×√7-'striped' (single-layer In) phase suggests a double-layer In structure for the √7×√7 phases.
A long-range Moiré-like superstructure was observed, attributed to lattice mismatch between In and Si(111).

Conclusions:

The In-induced √7×√7-hex and √7×√7-rect phases on Si(111) originate from the same double-layer In structure.
This finding contradicts the existing notion of two distinct √7×√7 surfaces with different In coverages.
The observed Moiré superstructure is a consequence of the epitaxial relationship between the In double layer and the Si(111) substrate.