Related Experiment Video
Updated: Jan 21, 2026

Gradient Echo Quantum Memory in Warm Atomic Vapor
Published on: November 11, 2013
Atomic localization of quantum emitters in multilayer hexagonal boron nitride.
Tobias Vogl1, Marcus W Doherty, Ben C Buchler
1Centre for Quantum Computation and Communication Technology, Department of Quantum Science, Research School of Physics and Engineering, The Australian National University, Acton ACT 2601, Australia. tobias.vogl@uni-jena.de ping.lam@anu.edu.au.
Researchers precisely located quantum emitters in hexagonal boron nitride (hBN) using layer-by-layer etching. Emitter location and fabrication method correlate, impacting their excited state lifetime.
Area of Science:
- Quantum optics
- Materials science
- Solid-state physics
Background:
- Two-dimensional hexagonal boron nitride (hBN) hosts single-photon emitters with room-temperature operation.
- These quantum emitters exhibit high luminosity but their precise nature remains unknown.
- Understanding these emitters is crucial for quantum technologies.
Purpose of the Study:
- To precisely localize quantum emitters in multilayer hBN using layer-by-layer etching.
- To investigate the correlation between emitter location, fabrication method, and excited state lifetime.
- To elucidate the underlying mechanisms affecting emitter properties.
Main Methods:
- Layer-by-layer etching of multilayer hBN for atomic precision localization.
- Correlation analysis of emitter position with fabrication methods (plasma treatment vs. electron irradiation).
- Finite-difference time-domain and density functional theory simulations.
Main Results:
- Emitter location is dependent on fabrication method: plasma-treated emitters are near-surface, electron-irradiated emitters are distributed throughout.
- Lower kinetic energy of plasma ions compared to electron irradiation explains positional disparity.
- Near-surface emitters exhibit shorter excited state lifetimes than bulk emitters.
- Simulations rule out optical and electronic effects as primary causes for lifetime differences.
Conclusions:
- Emitter position and fabrication method are key factors influencing quantum emitter properties in hBN.
- Surface coupling or phonon interactions are potential causes for reduced lifetimes in near-surface emitters.
- This work provides a pathway for identifying the defect and engineering emitter properties for quantum applications.
Related Concept Videos
The Quantum-Mechanical Model of an Atom
Atomic Mass
Quantum Numbers
Hybridization of Atomic Orbitals I
Atomic Orbitals
Atomic Radii and Effective Nuclear Charge

