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Published on: January 17, 2018
Polymer-Assisted Deposition of Gallium Oxide for Thin-Film Transistor Applications
Lin Chen1, Wangying Xu1, Wenjun Liu1
1College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials , Shenzhen University , Shenzhen 518060 , China.
Abstract:
We report the fabrication of gallium oxide (GaO) thin films by a novel polymer-assisted deposition (PAD) method. The influence and mechanism of postannealing temperature (200-800 °C) on the formation and properties of GaO thin films are investigated by complementary characterization analyses. The results indicate that solution-deposited GaO experiences the elimination of organic residuals as well as the transformation of amorphous GaO to crystalline GaO with the increase in annealing temperature. High-quality GaO could be achieved with a smooth surface, wide band gap, and decent dielectric performance. Moreover, the solution-processed In2O3 thin-film transistors based on optimized GaO dielectrics demonstrate outstanding electrical performance, including a low operating voltage of 5 V, a mobility of 3.09 cm2 V-1 s-1, an on/off current ratio of 1.8 × 105, and a subthreshold swing of 0.18 V dec-1. Our study suggests that GaO achieved by PAD shows great potential for further low-cost and high-performance optoelectronic applications.
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