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Related Experiment Video

Updated: Jan 21, 2026

Layer Microdissection of Tricuspid Valve Leaflets for Biaxial Mechanical Characterization and Microstructural Quantification
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Microstructural Characterization of GaN Grown on SiC.

Sabyasachi Saha1, Deepak Kumar1, Chandan K Sharma1

  • 1Defence Metallurgical Research Laboratory, PO Kanchanbagh, Hyderabad 500058, India.

Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada
|August 2, 2019
PubMed
Summary

Micro-cracking in Gallium Nitride (GaN) films grown on Silicon Carbide (SiC) is linked to the Aluminum Nitride (AlN) nucleation layer. A rough AlN surface induces tensile stress, causing GaN film cracking.

Keywords:
GaNMOCVDSiCcrackstress

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Nanotechnology

Background:

  • Gallium Nitride (GaN) films are crucial for electronic and optoelectronic devices.
  • Growth of GaN on Silicon Carbide (SiC) substrates often requires an Aluminum Nitride (AlN) nucleation layer.
  • Micro-cracking in GaN films can degrade device performance.

Purpose of the Study:

  • To investigate the causes of micro-cracking in GaN films grown on SiC with an AlN nucleation layer.
  • To understand the relationship between the AlN nucleation layer's surface morphology and GaN film microstructure.
  • To identify the role of stress evolution in GaN film cracking.

Main Methods:

  • Metal Organic Chemical Vapor Deposition (MOCVD) for GaN film growth.
  • Surface characterization using Optical Microscopy and Atomic Force Microscopy (AFM).
  • Microstructure and stress analysis via Raman Spectroscopy, Scanning Electron Microscopy (SEM), and Transmission Electron Microscopy (TEM).

Main Results:

  • Micro-cracking was observed in some GaN films.
  • A correlation was found between the AlN nucleation layer's surface roughness and stress in the GaN epilayers.
  • TEM analysis confirmed that rough AlN surfaces lead to tensile stresses in GaN, resulting in cracking.
  • Raman spectroscopy indicated significant tensile residual stress within the AlN nucleation layer.

Conclusions:

  • The surface morphology of the AlN nucleation layer is a critical factor influencing GaN film cracking.
  • Rough AlN surfaces promote tensile stress development in GaN films, leading to micro-cracking.
  • Understanding and controlling AlN nucleation layer morphology is essential for fabricating crack-free GaN films.