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Updated: Jan 21, 2026

A Functional Assay for Gap Junctional Examination; Electroporation of Adherent Cells on Indium-Tin Oxide
Published on: October 18, 2014
Study of Double Layer Indium Tin Oxide in Silicon Hetero-Junction Solar Cells
Ah Reum Lee1, Doo Won Lee1, Sang Hee Lee1
1Green Strategic Energy Research Institute, Department of Electronics Engineering, Sejong University, Gwangjin-gu, Seoul, 05006, Korea.
Abstract:
In this literature, we discussed the effect of anti-reflection coating of silicon heterojunction (SHJ) solar cells with different characteristics of double layered indium tin oxide (ITO/ITO) structure. Firstly, the OPAL 2 simulation was performed to optimize the values of the photo generation-current density of ITO/ITO/Si device structures. Afterwards, experimental work was conducted by depositing ITO on the SHJ solar cell to analyze the anti-reflection coating effect. ITO was deposited on the SHJ solar cell for 90 to 180 seconds by varying the oxygen flow rate. The highest short-circuit current density of 39.25 mA/cm² was obtained when ITO was deposited for 150 seconds, which was higher than the short-circuit current density of non-deposited cell of ITO (38 mA/cm²). The efficiency of the SHJ solar cell increased by about 2% after additional ITO deposition to 20.75%, which was due to the improvement of short-circuit current density by ITO deposition. The double layer ITO helped to improve the efficiency of SHJ solar cell by increasing light absorption in a silicon wafer.
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