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Volume Shrinkage-Induced Voiding Mechanism During Electromigration of Cu/Ni/Sn-Ag Microbump
Kirak Son1, Gyu-Tae Park2, Byeong-Rok Lee3
1School of Materials Science and Engineering, Andong National University, Andong-si 36729, Korea.
Abstract:
The effects of annealing, electromigration, and thermomigration on volume shrinkage and voiding mechanisms of Cu/Ni/Sn-2.5Ag microbumps are systematically investigated by using in-situ scanning electron microscopy under current stressing of 1.5×105 A/cm² at 150 °C. The resistance increases rapidly in the initial stage due to formation of intermetallic compounds (IMC)s followed by a gradual increase in resistance. Growth of Ni₃Sn₄ IMCs is controlled by a diffusion-dominant mechanism, and voids and volume shrinkage are closely related to IMC phase transformation of (Au, Ni)Sn₄ to Ni₃Sn₄ in microbumps.
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