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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Recent advances in plasma modification of 2D transition metal dichalcogenides

Haiyan Nan1, Renwu Zhou2, Xiaofeng Gu1

  • 1Engineering Research Center of IoT Technology Applications (Ministry of CEducation), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China. xiaosq@jiangnan.edu.cn.

Nanoscale
|August 23, 2019
PubMed

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