Phase-change heterostructure enables ultralow noise and drift for memory operation

Keyuan Ding1,2, Jiangjing Wang3,4, Yuxing Zhou3

  • 1College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China.

Science (New York, N.Y.)
|August 24, 2019
PubMed
Summary

Researchers developed a novel phase-change heterostructure (PCH) to reduce noise and drift in phase-change random access memory (PCRAM) devices. This innovation enables reliable neuro-inspired computing by improving data storage and processing precision.

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