Alternating atomic-dipole layers and switching dynamics in Al1-xScxN ferroelectrics

Yonghui Zheng1, Ruirong Bai1,2, Tianjiao Xin1

  • 1Key Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering (School of Integrated Circuits Science and Engineering), East China Normal University, Shanghai, China.

Science (New York, N.Y.)
|July 2, 2026
PubMed
Summary

Aluminum Scandium Nitride (AlScN) ferroelectrics show great potential for electronics. Chemical ordering in AlScN reduces the switching energy barrier, enabling lower coercive fields and improved device performance.

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