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Updated: Jan 20, 2026

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Improvement of Interface Thermal Resistance for Surface-Mounted Ultraviolet Light-Emitting Diodes Using a Graphene
Renli Liang1, Jiangnan Dai1, Lei Ye1
1Wuhan National Laboratory for Optoelectronics and School of Mechanical Science & Engineering, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074, China.
Abstract:
In this study, based on silicone composites with graphene oxide (GO) as a filler, a novel packaging strategy was proposed to reduce the interface thermal resistance of surface-mounted ultraviolet light-emitting diodes (UV-LEDs) and provide a potentially effective way for enhancing the long-term stability of devices. The 4 wt % GO-based composite showed an excellent performance in the thermal conductivity, and the interface thermal resistance was reduced by 34% after embedding the 4 wt % GO-based composite into the air gaps of bonding interfaces in the UV-LEDs, leading to a reduction of junction temperature by 1.2 °C under the working current of 1000 mA. Meanwhile, a decrease of thermal stress in bonding interfaces was obtained based on the finite element analysis. What is more, it was found that the lifetime of UV-LEDs with the proposed structure could be obviously improved. It is believed to provide a simple and effective approach for improving the performance of surface-mounted UV-LEDs.
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