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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric in Solution-Processed Organic Field-Effect Transistors.
Reshma Raveendran1, Manoj A G Namboothiry1
1School of Physics, Indian Institute of Science Education and Research-Thiruvananthapuram, Maruthamala P O, Vithura, Thiruvananthapuram, Kerala 695551, India.
Extended ultraviolet-ozone treatment modifies poly(dimethylsiloxane) (PDMS) surfaces, enhancing their suitability as gate dielectrics in organic field-effect transistors (OFETs). This method improves surface wettability for diverse solvents, enabling broader applications in organic electronics.
Area of Science:
- Materials Science
- Organic Electronics
- Surface Chemistry
Background:
- Poly(dimethylsiloxane) (PDMS) is a versatile elastomer with applications in organic electronics.
- Its inherent hydrophobicity and low surface energy limit its use as a gate dielectric in solution-processed organic field-effect transistors (OFETs).
Purpose of the Study:
- To develop a simple surface modification method for PDMS to enable its use as a gate dielectric in solution-processed OFETs.
- To investigate the effect of extended ultraviolet-ozone (UVO) treatment on PDMS surface properties.
Main Methods:
- Extended ultraviolet-ozone (UVO) treatment was applied to modify PDMS surfaces.
- Contact angle measurements were used to assess surface wettability.
- The modified PDMS was integrated as a gate dielectric in solution-processed n- and p-channel OFETs.
Main Results:
- Extended UVO treatment enhanced PDMS surface wettability and adherence to both polar and nonpolar liquids.
- Morphological changes on the PDMS surface, rather than just polar group creation, were responsible for the improved solvent compatibility.
- The modified PDMS served effectively as a gate dielectric in OFETs utilizing PC$_{60}$BM and rr-P3HT semiconductors.
Conclusions:
- Extended UVO treatment offers a simple and effective method to overcome the limitations of PDMS for gate dielectric applications in solution-processed OFETs.
- The surface modification strategy broadens the applicability of PDMS in organic electronic devices.
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