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Published on: January 28, 2021
Optical absorption of composition-tunable InGaAs nanowire arrays
1Walter Schottky Institut, Physik Department & Center for Nanotechnology and Nanomaterials, Technische Universität München, Garching, D-85748, Germany.
Indium Gallium Arsenide (InGaAs) nanowire (NW) arrays show strong optical absorption. Geometric factors, like diameter, significantly impact InGaAs NW absorption more than composition changes.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Indium Gallium Arsenide (InGaAs) nanowire (NW) arrays are promising for photovoltaics and photodetectors due to their electronic properties and tunable band gaps.
- Understanding their optical absorption is crucial for optimizing device performance.
Purpose of the Study:
- To systematically investigate the optical absorption characteristics of composition-tunable vertical InGaAs NW arrays.
- To determine the influence of composition (Ga-molar fraction) and geometry (diameter, period, fill factor) on optical generation rate and absorption spectra.
Main Methods:
- Finite-difference time-domain (FDTD) simulations were used to model optical generation rates.
- Spectrally resolved ultraviolet-visible-near-infrared (UV-vis-NIR) spectroscopy was employed to measure optical absorption on transferred NW arrays.
Main Results:
- Simulations showed InGaAs NWs with diameters of 100-250 nm and moderate fill factors enhance generation rates compared to bulk materials.
- Increased Ga-molar fraction requires adjusted geometry (smaller fill factors, larger diameters) to maintain high generation rates.
- Experimental results indicated that NW diameter variations (< ±20 nm) strongly affect absorption spectra, causing shifts > 700 meV, while composition changes (0 < x(Ga) < 0.5) had negligible influence.
Conclusions:
- Optical absorption in InGaAs NW arrays is significantly more sensitive to geometric parameters than to electronic band gap variations.
- Precise control over NW diameter is critical for tuning optical absorption in InGaAs NW-based devices.
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