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Scaled-up Direct-Current Generation in MoS2 Multilayer-Based Moving Heterojunctions.

Jun Liu, Feifei Liu1, Rima Bao2

  • 1School of Electrical Engineering and Automation , Jiangxi University of Science and Technology , Ganzhou 341000 , China.

ACS Applied Materials & Interfaces
|September 4, 2019
PubMed
Summary

Scaling up direct-current (dc) triboelectricity in MoS2 nanocontacts is achieved using heterojunctions. Tailoring interfaces optimizes power output for energy harvesting and sensing applications.

Keywords:
MoS2direct-currentenergy harvestingheterojunctiontribo-tunnelingtriboelectricity

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Energy Harvesting

Background:

  • Direct-current (dc) triboelectricity generation in molybdenum disulfide (MoS2) multilayer-based Schottky nanocontacts is crucial for energy harvesting and sensing.
  • Scaling up this nanoscale phenomenon is essential for practical applications.

Purpose of the Study:

  • To investigate techniques for scaling up dc triboelectricity generation in MoS2 multilayer-based Schottky nanocontacts.
  • To explore the use of various MoS2 multilayer-based heterojunctions for enhanced power output.

Main Methods:

  • Utilized metal/semiconductor (MS), metal/insulator/semiconductor (MIS), and semiconductor/insulator/semiconductor (SIS) moving structures based on MoS2 multilayers.
  • Analyzed charge carrier transport mechanisms including thermionic emission, defect conduction, and quantum tunneling across interfacial potential barriers.
  • Investigated the role of band bending in MoS2 surface-charged regions on dc power output direction.

Main Results:

  • Demonstrated that various MoS2 multilayer-based heterojunctions (MS, MIS, SIS) can effectively scale up dc triboelectricity output.
  • Identified thermionic emission, defect conduction, and quantum tunneling as key mechanisms for charge carrier transport.
  • Showcased that interface engineering and band bending in MoS2 significantly influence and optimize power output and its direction.

Conclusions:

  • Interface structure engineering in MoS2 multilayer-based heterojunctions is a viable strategy for scaling up dc triboelectricity.
  • Optimized power output and control over dc power direction can be achieved through tailored interfaces.
  • This research opens new pathways for developing high-performance, semiconductor-based mechanical energy conversion devices.