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Understanding Interlayer Contact Conductance in Twisted Bilayer Graphene.

Zhiwei Yu1, Aisheng Song1, Luzhao Sun2,3

  • 1State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China.

Small (Weinheim an Der Bergstrasse, Germany)
|September 7, 2019
PubMed
Summary

Interlayer contact conductance in bilayer graphene (BLG) significantly depends on twist angle, impacting electronic device performance. AB-stacking BLG shows higher conductance than twisted BLG due to coupling-decoupling transitions.

Keywords:
C-AFMgrapheneinterlayer contact conductancetwist angle

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Bilayer and few-layer 2D materials exhibit unique electrical properties crucial for advanced electronic devices.
  • Understanding interlayer contact conductance is vital for optimizing the performance of these 2D electronic systems.

Purpose of the Study:

  • To investigate the relationship between twist angle and interlayer contact conductance in bilayer graphene (BLG).
  • To explore the influence of stacking structure on the electrical properties of BLG.

Main Methods:

  • Fabrication of bilayer graphene (BLG) with various twisted stacking structures using chemical vapor deposition (CVD).
  • Conductive atomic force microscope (C-AFM) experiments to map interlayer contact conductance.
  • Density functional theory (DFT) calculations and theoretical modeling.

Main Results:

  • Interlayer contact conductance in BLG is strongly dependent on the twist angle.
  • AB-stacking BLG (0°) exhibits approximately 4 times higher interlayer contact conductance than 30° twisted BLG (t-BLG).
  • Moiré superlattice current images reveal modulations in local interlayer contact conductance in t-BLG, attributed to carrier density and tunneling barriers.

Conclusions:

  • The twist angle-dependent interlayer contact conductance in BLG arises from coupling-decoupling transitions.
  • Local variations in interfacial carrier density and tunneling barrier height modulate conductance in twisted BLG.
  • This study provides insights into controlling interlayer contact conductance for improved 2D electronic device design.