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Related Concept Videos

Bipolar Junction Transistor01:22

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
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Reliability and Stability Issues in Bi2O2Se/β-Bi2SeO5 Field-Effect Transistors.

Mina Bahrami1, Mohammad Rasool Davoudi1, Axel Verdianu1

  • 1Institute for Microelectronics, Technische Universität Wien, Vienna 1040, Austria.

ACS Nano
|July 14, 2026
PubMed
Summary

Native defects in bismuth oxychalcogenide (Bi2O2Se) and its native oxide (Bi2SeO5) impact nanoelectronic device performance. Understanding these defects is key to improving the reliability of Bi2O2Se/Bi2SeO5-based devices.

Keywords:
2D semiconductorBi2O2Sebias temperature instability (BTI)charge trappinghigh-κ native oxidezipper materialsβ-Bi2SeO5

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Semiconductor Physics

Background:

  • Bismuth oxychalcogenide (Bi2O2Se) is a promising semiconductor for nanoelectronics due to its high electron mobility, suitable bandgap, and air stability.
  • It forms a high-κ native oxide, Bi2SeO5, crucial for device functionality.
  • Intrinsic point defects in both Bi2O2Se and Bi2SeO5 can significantly affect electronic properties and device reliability.

Purpose of the Study:

  • To investigate the electronic structure, formation energies, and trap levels of native defects in Bi2O2Se and β-Bi2SeO5 using density functional theory.
  • To correlate theoretical defect findings with experimental measurements in Bi2O2Se/β-Bi2SeO5 field-effect transistors.
  • To elucidate the role of defects in device reliability issues like hysteresis and bias temperature instability.

Main Methods:

  • Density Functional Theory (DFT) calculations to determine defect properties.
  • Investigation of electronic structure, formation energies, trap levels, and relaxation energies.
  • Experimental characterization of a prototype Bi2O2Se/β-Bi2SeO5 field-effect transistor using scanning transmission electron microscopy (STEM).

Main Results:

  • Selenium and oxygen vacancies in Bi2O2Se act as shallow donors, contributing to n-type conductivity.
  • Oxygen vacancies in β-Bi2SeO5 create deep-level trap states, potentially limiting device performance.
  • Theoretical defect identification was successfully correlated with experimental device measurements.

Conclusions:

  • Native defects, particularly vacancies, play a critical role in the electronic behavior and reliability of Bi2O2Se/β-Bi2SeO5 heterostructures.
  • Understanding these defects is essential for mitigating performance limitations and improving device stability.
  • The findings provide crucial input for reliability modeling and defect engineering strategies for future nanoelectronic applications.