Related Experiment Video
Updated: Jan 20, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Diameter modulation of 3D nanostructures in focused electron beam induced deposition using local electric fields and
Javier Pablo-Navarro1, Soraya Sangiao1,2,3, César Magén1,2,3
1Laboratorio de Microscopías Avanzadas (LMA)-Instituto de Nanociencia de Aragón (INA), Universidad de Zaragoza, E-50018 Zaragoza, Spain.
Abstract:
Focused electron beam induced deposition (FEBID) is a leading nanolithography technique in terms of resolution and the capability for three-dimensional (3D) growth of functional nanostructures. However, FEBID still presents some limitations with respect to the precise control of the dimensions of the grown nano-objects as well as its use on insulating substrates. In the present work, we overcome both limitations by employing electrically-biased metal structures patterned on the surface of insulating substrates. Such patterned metal structures serve for charge dissipation and also allow the application of spatially-dependent electric fields. We demonstrate that such electric fields can dramatically change the dimensions of the growing 3D nanostructures by acting on the primary electron beam and the generated secondary electrons. In the performed experiments, the diameter of Pt-C and W-C vertical nanowires grown on quartz, MgO and amorphous SiO2 is tuned by application of moderate voltages (up to 200 V) on the patterned metal microstructures during growth, achieving diameters as small as 50 nm. We identify two competing effects arising from the generated electric fields: a slight change in the primary beam focus point and a strong action on the secondary electrons. Beam defocus is exploited to achieve the in situ modulation of the diameter of 3D FEBID structures during growth.
Related Concept Videos
08:12Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Focused Ion Beams
As electron microscopes become more complex and widely used in research labs, it becomes more of a necessity to introduce their capabilities. Focused ion beam (FIB) is an instrument that can be employed in order to fabricate, trim, analyze and characterize materials on mico- and nano-scales in a wide variety of fields from nano-electronics to medicine. FIB...
08:20Sample Preparation by 3D-Correlative Focused Ion Beam Milling for High-Resolution Cryo-Electron Tomography
10:54Cryo-electron Microscopy Specimen Preparation By Means Of a Focused Ion Beam
Focused Ion Beam Scanning Electron Microscopy for 3D Reconstruction of Synaptically Linked Neurons
09:09Targeted Studies Using Serial Block Face and Focused Ion Beam Scan Electron Microscopy
